features z low current (max.50 ma) z high voltage (max.300v) z telephony and professional communication equipment. marking: BF820:1v, bf822: 1x maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage BF820 bf822 300 250 v v ceo collector-emitter voltage BF820 bf822 300 250 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 0.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 BF820 bf822 300 250 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 BF820 bf822 300 250 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 0.01 a emitter cut-off current i ebo v eb = 5v,i c =0 0.05 a dc current gain h fe v ce = 20v,i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30ma,i b = 5ma 0.6 v transition frequency f t v ce =10v, i c = 10ma, f= 100mhz 60 mhz collector output capacitance c ob v cb =30v,i e =0,f=1mhz 1.6 pf so t -23 1. base 2. emitter 3. collector bf8 20/ bf8 22 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu bf8 20/ bf8 22
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